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Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 1 of 13 version# 1.2 feature: ? high isolation voltage between input and output ? (viso = 5000v rms) ? current transfer ration ? (ctr: min. 20% at i f = 1ma, v ce =5v) ? high collector - emitter voltage v ceo =80v ? operating temperature up to +10 0 oc ? compact dual - in - line p ackage ? available p ackaged in tube or tape and reel ? available with st andard dip - 4, wide lead bend, and smd lead bend options . ? conventional black housing package schematic: certification & compliance: ? pb free and rohs compliant ? ul recogn ized ( file # e338132) ? vde recognized (file # 40030457)
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 2 of 13 version# 1.2 dimension: 4 - pin dip (standard) : wide lead bend ( option w ):
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 3 of 13 version# 1.2 smd lead bend (option s): all dimensions are in mm tolerance = +/ - 0.1mm
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 4 of 13 version# 1.2 absolute maximum rating : symbol parameter rating units q81 4 t stg storage temperature - 55 ~ +1 50 oc t opr operating temperature - 55 ~ +1 00 oc t sol lead solder temperat ure 260 for 10 sec oc p tot total power dissipation 200 mw emitter i f continuous forward current 60 ma p d power dissipation 100 mw power dissipation derated above 100 oc 2.9 mw /oc detector v ceo collector C emitter voltage 80 v v eco emitter - collector voltage 6 v p c collector power dissipation 150 mw collector po wer dissipation derate d above 80 oc 5.8 mw/oc
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 5 of 13 version# 1.2 electrical characteristi c (t a =25 o c) emitter symbol characteristic device test condition range unit min typ max v f for ward voltage q81 4 i f = 20ma - 1.2 1.4 v c in input capacitance q81 4 v = 0, f = 1 k hz - 50 250 pf detector symbol characteristic device test condition range unit min typ max i ceo collector - emitter dark current q81 4 v ce = 20v, i f = 0ma - - 1 00 a bv ceo collector - e mitter breakdown voltage q81 4 i c = 0.1ma 80 - - v bv eco emitter - collector breakdown voltage q81 4 i e = 0.1ma 6 - - v
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 6 of 13 version# 1.2 d c transfer characteristic symbol characteristic device test condition range unit min t yp max ctr current transfer ratio Q814 i f = 1ma, v ce = 5v 20 - 300 % Q814a 50 - 150 v ce(sat) collector - emitter saturation voltage q81 4 i f = 20ma, i c = 1 ma - 0.05 0.2 v ac characteristic symbol characteristic device test condition range unit min typ max f c cut - off frequency Q814 v ce = 5v, i c = 2ma r l = 100?, - 3db - 80 - khz t r rise time Q814 v ce = 2v, i c = 2ma r l = 100?, - 7 18 s t f fall time Q814 v ce = 2v, i c = 2ma r l = 100?, - 11 18 s isolation characteristic symbol characteristic device test condition range unit min typ max r iso is olation resistance Q814 v io = 500vdc, 40~60% r.h. 5x10 10 10 11 - ? c iso isolation capacitance Q814 v io = 0, f = 1mhz - 0.6 1.0 p f v iso isolation voltage Q814 f = 60hz, t = 1 min, i i - o 2a 5000 - - v rms
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 7 of 13 version# 1.2 characteristic curves:
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 8 of 13 version# 1.2
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 9 of 13 version# 1.2 test circuit for response time solder reflow temperature profile:
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 10 of 13 version# 1.2 solder prof ile & footprint: recommended solder footprint for smd leadform units: mm tolerance: +/ - 0.1mm device mark ing: q = qt - brightek corporation q 814 = device part n umber f = country of origin r = binning option y = year ww = week v = vde option
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 11 of 13 version# 1.2 tape and reel packing specifications: tape dimensions:
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 12 of 13 version# 1.2 ordering information: part number orderable part number options description quantity per packing Q814 Q814 none standard 4pin dip 100pcs / tube Q814 v none with vde marking 100pcs / tube Q814 w w wide lead bend (0.4 inch spacing) 100pcs / tube Q814 w v w wide lead bend (0.4 inch spac ing) + vde markin g 100pcs / tube Q814 sta s smd lead form with tape and reel option 2 000pcs / reel Q814 stav s smd lead form with tape and reel option + vde marking 2 000pcs / reel
Q814 4 - pin dip phototransistor opto coupler product: Q814 date: february 1, 2011 page 13 of 13 version# 1.2 revision history: description: revision # revision date initi al release of q81 4 1.0 4/2 2/2010 add binning option 1.1 6/23/2010 feature, certification & compliance and ordering information updates 1.2 02/01 /2011 disclaimer qt - brightek reserves the right to make changes without further notice to any pro ducts herein to improve reliability, function or design. qt - brightek does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy qt - brighteks products are not authorized for use as critical components in life support devices or systems without the express written approval of qt - brightek. as used herein: 1. life support devices or systems are devic es or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to re sult in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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